MRF8P26080HR3 datasheet(3/14 Pages) FREESCALE

Part #	MRF8P26080HR3

Description	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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Manufacturer	FREESCALE [Freescale Semiconductor, Inc]

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MRF8P26080HR3 MRF8P26080HSR3

3

RF Device Data

Freescale Semiconductor

Table 4. Electrical Characteristics (TA =25°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Typical Performances (1) (In Freescale Doherty Characterization Test Fixture, 50 ohm system) VDD =28 Vdc, IDQA = 300 mA,

VGSB = 1.3 Vdc, 2570--2620 MHz Bandwidth

Pout @ 1 dB Compression Point, CW

P1dB

—

54

—

W

Pout @ 3 dB Compression Point, CW

P3dB

—

83

—

W

IMD Symmetry @ 12 W PEP, Pout where IMD Third Order

Intermodulation  30 dBc

(Delta IMD Third Order Intermodulation between Upper and Lower

Sidebands > 2 dB)

IMDsym

—

40

—

MHz

VBW Resonance Point

(IMD Third Order Intermodulation Inflection Point)

VBWres

—

70

—

MHz

Gain Flatness in 50 MHz Bandwidth @ Pout =14 W Avg.

GF

—

0.5

—

dB

Gain Variation over Temperature

(--30°Cto+85°C)

∆G

—

0.01

—

dB/°C

Output Power Variation over Temperature

(--30°Cto+85°C)

∆P1dB

—

0.002

—

dB/°C

1. Measurement made with device in a Symmetrical Doherty configuration.

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