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MRF8P26080HR3 Datasheet(PDF) 3 Page - Freescale Semiconductor, Inc |
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MRF8P26080HR3 Datasheet(HTML) 3 Page - Freescale Semiconductor, Inc |
3 / 14 page MRF8P26080HR3 MRF8P26080HSR3 3 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TA =25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (1) (In Freescale Doherty Characterization Test Fixture, 50 ohm system) VDD =28 Vdc, IDQA = 300 mA, VGSB = 1.3 Vdc, 2570--2620 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — 54 — W Pout @ 3 dB Compression Point, CW P3dB — 83 — W IMD Symmetry @ 12 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym — 40 — MHz VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) VBWres — 70 — MHz Gain Flatness in 50 MHz Bandwidth @ Pout =14 W Avg. GF — 0.5 — dB Gain Variation over Temperature (--30°Cto+85°C) ∆G — 0.01 — dB/°C Output Power Variation over Temperature (--30°Cto+85°C) ∆P1dB — 0.002 — dB/°C 1. Measurement made with device in a Symmetrical Doherty configuration. |
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