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S680-338 Datasheet(PDF) 2 Page - Freescale Semiconductor, Inc |
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S680-338 Datasheet(HTML) 2 Page - Freescale Semiconductor, Inc |
2 / 18 page 2 RF Device Data Freescale Semiconductor MMG20271HT1 Table 4. Electrical Characteristics (VDD = 5 Vdc, 2140 MHz, TA =25°C, 50 ohm system, in Freescale Application Circuit) Characteristic Symbol Min Typ Max Unit Small--Signal Gain (S21) Gp 13.9 16 — dB Input Return Loss (S11) IRL — --14 — dB Output Return Loss (S22) ORL — --22 — dB Power Output @ 1dB Compression P1dB — 27.5 — dBm Third Order Input Intercept Point IIP3 — 26 — dBm Third Order Output Intercept Point OIP3 — 42 — dBm Reverse Isolation (S12) |S12| — --23 — dB Noise Figure NF — 1.7 — dB Supply Current (1) IDD 148 180 227 mA Supply Voltage (1) VDD — 5 — V 1. For reliable operation, the junction temperature should not exceed 150°C. Table 5. Functional Pin Description Name Pin Number Description RFin (1) 3 RF input for the power amplifier. RFin has an RF choke to ground internal to the package. No external blocking is necessary unless externally applied DC is present on the trace. RFout/ VDD 8, 9 RF output for the power amplifier. This pin is DC coupled and requires a DC blocking capacitor. VBA 12 Bias voltage and current adjust pin. GND Backside Center Metal The center metal base of the QFN package provides both DC and RF ground as well as the heat sink contact for the IC. 1. The RF input has a DC path to ground and therefore may require an external decoupling capacitor. Table 6. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD 22--A114) 1B (Minimum) Machine Model (per EIA/JESD 22--A115) A (Minimum) Charge Device Model (per JESD 22--C101) IV (Minimum) Table 7. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD22--A113, IPC/JEDEC J--STD--020 1 260 °C Figure 1. Pin Connections (Top View) VBA RFout/VDD RFin 19 28 37 12 11 10 45 6 RFout/VDD N.C. N.C. N.C. N.C. N.C. N.C. N.C. N.C. GND |
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