SKP15N60

SKW15N60

1

Rev. 2.3

Sep 08

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

combined with low conduction losses

• Short circuit withstand time – 10 µs

• Designed for:

- Motor controls

- Inverter

• NPT-Technology for 600V applications offers:

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

• Very soft, fast recovery anti-parallel EmCon diode

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC

Type

Marking

Package

SKP15N60

600V

15A

2.3V

150

°C

K15N60 PG-TO-220-3-1

SKW15N60

600V

15A

2.3V

150

°C

K15N60 PG-TO-247-3

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

600

V

DC collector current

°C

°C

31

15

62

Turn off safe operating area

-

62

Diode forward current

°C

°C

31

15

62

A

Gate-emitter voltage

±20

V

Short circuit withstand time

2

10

µs

Power dissipation

°C

139

W

Operating junction and storage temperature

-55...+150

°C

Soldering temperature

wavesoldering, 1.6 mm (0.063 in.) from case for 10s

260

°C

PG-TO-220-3-1

(TO-220AB)

G

C

E

PG-TO-247-3