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MRFE6S9201HR3 Datasheet(PDF) 8 Page - Freescale Semiconductor, Inc |
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MRFE6S9201HR3 Datasheet(HTML) 8 Page - Freescale Semiconductor, Inc |
8 / 13 page 8 RF Device Data Freescale Semiconductor MRFE6S9201HR3 MRFE6S9201HSR3 TYPICAL CHARACTERISTICS 400 16 0 70 Pout, OUTPUT POWER (WATTS) CW Figure 11. Power Gain and Drain Efficiency versus CW Output Power VDD = 28 Vdc IDQ = 1400 mA f = 880 MHz TC = −30_C 25 _C 85 _C 10 23 22 21 20 19 50 40 30 20 10 Gps ηD 100 −30 _C 25 _C 85 _C 18 17 1 60 Figure 12. Power Gain versus Output Power Pout, OUTPUT POWER (WATTS) CW VDD = 24 V 350 18 22 0 19 20 21 IDQ = 1400 mA f = 880 MHz 50 100 200 28 V 32 V 150 250 300 250 108 90 TJ, JUNCTION TEMPERATURE (°C) Figure 13. MTTF versus Junction Temperature This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 40 W Avg., and ηD = 31.3%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 107 106 105 110 130 150 170 190 210 230 |
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