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MRFE6S9160HSR3 Datasheet(PDF) 6 Page - Freescale Semiconductor, Inc

Part # MRFE6S9160HSR3
Description  RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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Manufacturer  FREESCALE [Freescale Semiconductor, Inc]
Direct Link  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MRFE6S9160HSR3 Datasheet(HTML) 6 Page - Freescale Semiconductor, Inc

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6
RF Device Data
Freescale Semiconductor
MRFE6S9160HR3 MRFE6S9160HSR3
TYPICAL CHARACTERISTICS
0
−5
−10
−15
−20
980
820
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 3. Single-Carrier N-CDMA Broadband Performance
@ Pout = 35 Watts Avg.
960
940
920
900
880
860
−65
33
27
−40
−50
−55
ηD
VDD = 28 Vdc, Pout = 35 W (Avg.)
IDQ = 1200 mA, N−CDMA IS−95
Pilot, Sync, Paging, Traffic Codes 8
Through 13
−60
−45
30
21
20
18
16
15
13
14
17
19
ALT1
980
820
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 4. Single-Carrier N-CDMA Broadband Performance
@ Pout = 70 Watts Avg.
960
940
920
900
880
860
840
−70
50
40
−30
−50
−60
ηD
−40
35
45
20
18
16
14
12
13
15
17
19
ALT1
Figure 5. Two-Tone Power Gain versus
Output Power
100
16
22
1
IDQ = 1800 mA
1500 mA
Pout, OUTPUT POWER (WATTS) PEP
21
19
17
10
400
600 mA
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements, 100 kHz Tone Spacing
900 mA
Figure 6. Third Order Intermodulation Distortion
versus Output Power
−20
1
IDQ = 600 mA
Pout, OUTPUT POWER (WATTS) PEP
100
−30
−40
−50
−70
10
−10
900 mA
1800 mA
400
1500 mA
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements, 1 kHz Tone Spacing
20
18
1200 mA
−60
1200 mA
840
VDD = 28 Vdc, Pout = 70 W (Avg.)
IDQ = 1200 mA, N−CDMA IS−95 Pilot
Sync, Paging, Traffic Codes 8 Through 13
0
−5
−10
−15
−20


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