MRFE6S9046NR1 datasheet(6/21 Pages) FREESCALE

Part #	MRFE6S9046NR1

Description	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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Manufacturer	FREESCALE [Freescale Semiconductor, Inc]

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RF Device Data

Freescale Semiconductor

MRFE6S9046NR1 MRFE6S9046GNR1

TYPICAL CHARACTERISTICS

10

−70

−10

−20

−30

−50

0.1

100

−40

920

IRL

Gps

f, FREQUENCY (MHz)

Figure 4. Power Gain, Input Return Loss and Drain

Efficiency versus Frequency @ Pout = 35.5 Watts CW

−28

−16

−19

−22

−25

18.6

19.6

48

58

57

56

55

53

52

51

50

925

930

935

940

945

950

955

960

54

49

−31

VDD = 28 Vdc, Pout = 35.5 W CW, IDQ = 300 mA

920

IRL

Gps

f, FREQUENCY (MHz)

Figure 5. Power Gain, Input Return Loss, EVM and Drain

Efficiency versus Frequency @ Pout = 17.8 Watts Avg.

−35

−15

−20

−25

−30

18.5

19.5

1

42

41

40

39

6

5

4

3

925

930

935

940

945

950

955

960

38

2

−40

VDD = 28 Vdc, Pout = 17.8 W (Avg.)

IDQ = 285 mA, EDGE Modulation

Pout, OUTPUT POWER (WATTS) CW

15

21

1

IDQ = 450 mA

VDD = 28 Vdc

f = 940 MHz

20

18

17

10

100

Figure 6. Power Gain versus Output Power

19

375 mA

TWO−TONE SPACING (MHz)

Figure 7. Intermodulation Distortion Products

versus Two-Tone Spacing

EVM

IM3−U

IM3−L

IM5−U

IM5−L

IM7−L

IM7−U

VDD = 28 Vdc, Pout = 44 W (PEP), IDQ = 300 mA

Two−Tone Measurements

(f1 + f2)/2 = Center Frequency of 940 MHz

ηD

18.7

19.5

19.4

19.3

19

18.9

18.8

19.2

19.1

19.4

19.3

19.2

19.1

19

18.9

18.8

18.7

18.6

16

300 mA

225 mA

150 mA

−60

1

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MRFE6S9046NR1 Datasheet(PDF) 6 Page - Freescale Semiconductor, Inc

MRFE6S9046NR1 Datasheet(HTML) 6 Page - Freescale Semiconductor, Inc

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