MRF8S18120HR3 MRF8S18120HSR3

1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

Designed for GSM and GSM EDGE base station applications with frequen-

cies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all

typical cellular base station modulation formats.

72 Watts CW

Frequency

(dB)

(%)

1805 MHz

18.2

49.8

1840 MHz

18.6

51.4

1880 MHz

18.7

53.9

• Capable of Handling 7:1 VSWR, @ 32 Vdc, 1840 MHz, 150 Watts CW

≃ 120 Watts CW

46 Watts Avg.

Frequency

(dB)

(%)

SR1

@ 400 kHz

(dBc)

SR2

@ 600 kHz

(dBc)

EVM

(% rms)

1805 MHz

17.9

41.0

--64

--76

1.6

1840 MHz

18.2

41.9

--63

--76

1.7

1880 MHz

18.3

43.2

--61

--76

2.0

Features

• Characterized with Series Equivalent Large--Signal Impedance Parameters

and Common Source S--Parameters

• Internally Matched for Ease of Use

• Integrated ESD Protection

• Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

• Optimized for Doherty Applications

• RoHS Compliant

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

--0.5, +65

Vdc

Gate--Source Voltage

--6.0, +10

Vdc

Operating Voltage

32, +0

Vdc

Storage Temperature Range

--65 to +150

°C

Case Operating Temperature

150

°C

225

°C

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

Document Number: MRF8S18120H

Rev. 1, 10/2010

Freescale Semiconductor

Technical Data

1805--1880 MHz, 72 W CW, 28 V

GSM, GSM EDGE

LATERAL N--CHANNEL

RF POWER MOSFETs

MRF8S18120HR3

MRF8S18120HSR3

CASE 465--06, STYLE 1

NI--780

MRF8S18120HR3

CASE 465A--06, STYLE 1

NI--780S

MRF8S18120HSR3

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