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FC803 Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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FC803 Datasheet(HTML) 1 Page - Sanyo Semicon Device |
1 / 2 page 22898HA (KT)/53196GI (KOTO) /O259MO, TS No.3193-1/2 FC803 Ordering number :EN3193A 30V, 70mA Rectifier SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Silicon Schottky Barrier Diode Specifications Absolute Maximum Ratings at Ta = 25˚C Electrical Characteristics at Ta = 25˚C Electrical Connection Features · Low forward voltage (VF max=0.55V) . · Fast reverse recorvery time (trr max=10ns) . · Composite type with 4 diodes contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC803 is formed with twi chips, each being equivalent to the SB007W03C, placed in one package. Package Dimensions unit:mm 1233A [FC803] 1:Anode 2:Anode 3:Cathode 4:Anode 5:Anode 6:Cathode SANYO:CP6 r e t e m a r a Pl o b m y Ss n o i t i d n o Cs g n i t a Rt i n U e g a t l o V e s r e v e R k a e P e v i t i t e p e RV M R R V e g a t l o V e g r u S e s r e v e R k a e P e v i t i t e p e r n o NV M S R V t n e r r u C t u p t u O e g a r e v AIO A m t n e r r u C d r a w r o F e g r u SI M S F e l c y c 1 , e v a w e n i s z H M 0 5 A e r u t a r e p m e T n o i t c n u Jj T e r u t a r e p m e T e g a r o t Sg t s T –55 to +125 ˚C ˚C 70 2 30 35 –55 to +125 0.55 10 5 3.0 30 trr Test Circuit Note) The specifications shown above are for each individual diode. · Marking:803 r e t e m a r a Pl o b m y Ss n o i t i d n o C s g n i t a Rt i n U n i mp y tx a m e g a t l o V e s r e v e RVR IR A µ 0 2 = V e g a t l o V d r a w r o FVF IF A m 0 7 = V t n e r r u C e s r e v e RIR VR V 5 1 = A µ e c n a t i c a p a C l a n i m e t r e t n IC VR z H M 1 = f , V 0 1 = F p e m i T y r e v o c e R e s r e v e Rr r tIF I = R t i u c r i C t s e T d e i f i c e p s e e S , A m 0 1 ) – ( = s n |
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