22898HA (KT)/53196GI (KOTO) /O259MO, TS No.3193-1/2

FC803

Ordering number :EN3193A

30V, 70mA Rectifier

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Silicon Schottky Barrier Diode

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Electrical Characteristics at Ta = 25˚C

Electrical Connection

Features

· Low forward voltage (VF max=0.55V) .

· Fast reverse recorvery time (trr max=10ns) .

· Composite type with 4 diodes contained in the CP

package currently in use, improving the mounting

efficiency greatly.

· The FC803 is formed with twi chips, each being

equivalent to the SB007W03C, placed in one

package.

Package Dimensions

unit:mm

1233A

[FC803]

1:Anode

2:Anode

3:Cathode

4:Anode

5:Anode

6:Cathode

SANYO:CP6

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trr Test Circuit

Note) The specifications shown above are for each individual diode.

· Marking:803

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