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MRF6V12250HSR3 Datasheet(PDF) 9 Page - Freescale Semiconductor, Inc

Part # MRF6V12250HSR3
Description  RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
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Manufacturer  FREESCALE [Freescale Semiconductor, Inc]
Direct Link  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MRF6V12250HSR3 Datasheet(HTML) 9 Page - Freescale Semiconductor, Inc

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MRF6V12250HR3 MRF6V12250HSR3
9
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — 960--1215 MHz
16
26
50
20
70
100
50
40
Pout, OUTPUT POWER (WATTS) PULSED
Figure 14. Pulsed Power Gain and Drain Efficiency
versus Output Power
ηD
22
350
f = 1215 MHz
30
20
18
VDD =50 Vdc
IDQ = 100 mA
Pulse Width = 128 μsec
Duty Cycle = 10%
Gps
24
0
150
200
250
300
60
1150 MHz
1030 MHz
960 MHz
1215 MHz 1150 MHz
1030 MHz
960 MHz
Figure 15. Broadband Performance @ Pout = 250 Watts Peak
11
21
950
f, FREQUENCY (MHz)
15
13
975
17
1000 1025 1050 1075 1100 1125
1225
--20
68
64
60
0
--5
12
14
16
18
62
58
--10
--15
VDD =50 Vdc,IDQ = 100 mA, Pout = 250 W Peak (25 W Avg.)
Pulse Width = 128 μsec, Duty Cycle = 10%
Gps
ηD
IRL
19
20
66
1150 1175 1200


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