10

RF Device Data

Freescale Semiconductor

MRF6S19100HR3 MRF6S19100HSR3

PRODUCT DOCUMENTATION

Refer to the following documents to aid your design process.

Application Notes

• AN1955: Thermal Measurement Methodology of RF Power Amplifiers

Engineering Bulletins

• EB212: Using Data Sheet Impedances for RF LDMOS Devices

REVISION HISTORY

The following table summarizes revisions to this document.

Revision

Date

Description

5

Dec. 2008

• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification

number, PCN13232, p. 1, 2

• Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality

is standard, p. 1

• Removed Total Device Dissipation from Max Ratings table as data was redundant (information already

provided in Thermal Characteristics table), p. 1

• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related

“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1

Functional Test”, On Characteristics table, p. 2

• Removed Forward Transconductance from On Characteristics table as it no longer provided usable

information, p. 2

• Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3

• Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part numbers,

p. 3

• Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture

limitations, p. 6

operating characteristics and location of MTTF calculator for device, p. 7

• Added Product Documentation and Revision History, p. 10