MRF5S9150HR3

7

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS

Figure 11. Power Gain and Drain Efficiency

versus CW Output Power

16

0

23

70

21

60

20

50

30

20

0.1

10

100

f = 880 MHz

22

10

-30

_C

25

_C

85

_C

19

18

40

85

_C

Figure 12. Power Gain versus Output Power

16 V

250

16

21

0

200

50

100

150

19

f = 880 MHz

20 V

24 V

28 V

32 V

17

20

18

17

1

300

210

drain current. Life tests at elevated temperatures have correlated to

better than

±10% of the theoretical prediction for metal failure. Divide

90

110

130

150

170

190

100

120

140

160

180

200

Figure 13. MTTF Factor versus Junction Temperature