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25 page 
MPC8315E PowerQUICC™ II Pro Processor Hardware Specifications, Rev. 0 Freescale Semiconductor 25 Ethernet: Three-Speed Ethernet, MII Management 9.1 eTSEC (10/100/1000 Mbps)—MII/RMII/RGMII/RTBI Electrical Characteristics The electrical characteristics specified here apply to all the media-independent interface (MII), reduced gigabit MII (RGMII), and reduced ten-bit interface (RTBI) signals except management data input/output (MDIO) and management data clock (MDC). The MII and RMII is defined for 3.3 V, while the RGMII, and RTBI can operate at 2.5 V. The RGMII and RTBI follow the Hewlett-Packard reduced pin-count interface for Gigabit Ethernet Physical Layer Device Specification Version 1.2a (9/22/2000). The electrical characteristics for MDIO and MDC are specified in Section 9.3, “Ethernet Management 9.1.1 MII, RMII, RGMII, and RTBI DC Electrical Characteristics All MII, RMII drivers and receivers comply with the DC parametric attributes specified in Table 23 for 3.3-V operation and RGMII, RTBI drivers and receivers comply with the DC parametric attributes specified in Table 24. The RGMII and RTBI signals are based on a 2.5 V CMOS interface voltage as defined by JEDEC EIA/JESD8–5. Table 23. MII/RMII (When Operating at 3.3 V) DC Electrical Characteristics Parameter Symbol Conditions Min Max Unit Supply voltage 3.3 V LVDD —— 3.0 3.6 V Output high voltage VOH IOH = –4.0 mA LVDD = Min 2.40 LVDD + 0.3 V Output low voltage VOL IOL = 4.0 mA LVDD = Min VSS 0.50 V Input high voltage VIH —— 2.1 LVDD + 0.3 V Input low voltage VIL — — –0.3 0.90 V Input high current IIH VIN 1 = LVDD — 40 μA Input low current IIL VIN 1 = VSS –600 — μA Note: |
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