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MRF9080LR3 Datasheet(PDF) 1 Page - Freescale Semiconductor, Inc |
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MRF9080LR3 Datasheet(HTML) 1 Page - Freescale Semiconductor, Inc |
1 / 11 page MRF9080LR3 1 RF Device Data Freescale Semiconductor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for GSM 900 MHz frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. • Typical Performance for GSM Frequencies, 960 MHz, 26 Volts Output Power @ P1db: 75 Watts Power Gain @ P1db: 18.5 dB Efficiency @ P1db: 55% • Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large-Signal Impedance Parameters • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage VDSS - 0.5, +65 Vdc Gate-Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 250 1.43 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Table 2. Thermal Characteristics Characteristic Symbol Value Unit Thermal Resistance, Junction to Case RθJC 0.7 °C/W Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model 1 (Minimum) Machine Model M1 (Minimum) Document Number: MRF9080 Rev. 8, 10/2008 Freescale Semiconductor Technical Data MRF9080LR3 920-960 MHz, 75 W, 26 V LATERAL N-CHANNEL RF POWER MOSFET CASE 465-06, STYLE 1 NI-780 © Freescale Semiconductor, Inc., 2008. All rights reserved. |
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