MRF9080LR3

1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

Designed for GSM 900 MHz frequency band, the high gain and broadband

performance of this device make it ideal for large - signal, common - source

amplifier applications in 26 volt base station equipment.

• Typical Performance for GSM Frequencies, 960 MHz, 26 Volts

Output Power @ P1db: 75 Watts

Power Gain @ P1db: 18.5 dB

Efficiency @ P1db: 55%

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW

Output Power

Features

• Internally Matched for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates

40μ″ Nominal.

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

- 0.5, +65

Vdc

Gate-Source Voltage

- 0.5, +15

Vdc

Derate above 25°C

250

1.43

W

W/°C

Storage Temperature Range

- 65 to +150

°C

Case Operating Temperature

150

°C

Operating Junction Temperature

200

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

0.7

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

1 (Minimum)

Machine Model

M1 (Minimum)

Document Number: MRF9080

Rev. 8, 10/2008

Freescale Semiconductor

Technical Data

MRF9080LR3

920-960 MHz, 75 W, 26 V

LATERAL N-CHANNEL

RF POWER MOSFET

CASE 465-06, STYLE 1

NI-780

© Freescale Semiconductor, Inc., 2008. All rights reserved.