PSMN030-150B

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Product data sheet

Rev. 02 — 13 December 2010

3 of 12

NXP Semiconductors

PSMN030-150B

N-channel TrenchMOS SiliconMAX standard level FET

Fig 1.

Normalized total power dissipation as a

function of mounting base temperature

Fig 2.

Normalized continuous drain current as a

function of mounting base temperature

unclamped inductive load

Fig 3.

Safe operating area; continuous and peak drain

currents as a function of drain-source voltage

Fig 4.

Single-shot avalanche rating; avalanche

current as a function of avalanche period

40

60

20

80

100

(%)

0

0

200

150

50

100

003aaf138

40

60

20

80

100

(%)

0

0

200

150

50

100

003aaf139

10

003aaf140

10

(A)

1

D.C.

100 ms

10 ms

1 ms

100

μs

tp = 10

μs

003aaf155

10

1

10

(A)

1

25

°C