PESD5V0V1BLD

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Product data sheet

Rev. 1 — 7 December 2010

5 of 14

NXP Semiconductors

PESD5V0V1BLD

Very low capacitance bidirectional ESD protection diode

Fig 4.

Peak pulse power as a function of exponential

pulse duration; typical values

Fig 5.

Relative variation of peak pulse power as a

function of junction temperature; typical

values

Fig 6.

Diode capacitance as a function of reverse

voltage; typical values

Fig 7.

Relative variation of reverse leakage current

as a function of junction temperature; typical

values

10

006aab606

10

(W)

1

0

200

150

50

100

001aaa193

0.4

0.8

1.2

0

05

4

23

1

006aab607

8

10

12

(pF)

6

006aab608

1

10

−100

150

100

050

−50