SIDC04D60F6_10 datasheet(2/4 Pages) INFINEON

Part #	SIDC04D60F6

Description	Fast switching diode 600V Emitter Controlled technology 70 關m chip soft , fast switching

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Manufacturer	INFINEON [Infineon Technologies AG]

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SIDC04D60F6

Edited by INFINEON Technologies, IMM PSD, L4334M, Edition 2.1, 09.03.2010

Maximum Ratings

Parameter

Symbol

Condition

Value

Unit

Repetitive peak reverse voltage

VRRM

Tvj = 25 °C

600

V

Continuous forward current

IF

Tvj < 150°C

1 )

Maximum repetitive forward current

IFRM

Tvj < 150°C

18

A

Junction temperature range

Tvj

-40...+175

°C

Operating junction temperature

Tvj

-40...+150

°C

Dynamic ruggedness²

)

Pmax

IFmax = 18A, VRmax = 600V,

Tvj

≤ 150°C

tbd

kW

1 ) depending on thermal properties of assembly

2 ) not subject to production test - verified by design/characterisation

Static Characteristic (tested on wafer), Tvj = 25 °C

Value

Parameter

Symbol

Conditions

min.

typ.

max.

Unit

Reverse leakage current

IR

VR=600V

27

µA

Cathode-Anode

breakdown Voltage

VBR

IR=0.8mA

600

V

Diode forward voltage

VF

IF=9A

1.6

V

Further Electrical Characteristics

Switching characteristics and thermal properties are depending strongly on module design and mounting

technology and can therefore not be specified for a bare die.

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