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IKW75N60T Datasheet(PDF) 1 Page - Infineon Technologies AG |
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IKW75N60T Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 13 page IKW75N60T TrenchStop® Series q Power Semiconductors 1 Rev. 2.6 Sep 08 Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5 µs • Positive temperature coefficient in VCE(sat) • very tight parameter distribution • high ruggedness, temperature stable behaviour • very high switching speed • Low EMI • Very soft, fast recovery anti-parallel EmCon HE diode • Qualified according to JEDEC 1) for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Applications: • Frequency Converters • Uninterrupted Power Supply Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Package IKW75N60T 600V 75A 1.5V 175 °C K75T60 PG-TO-247-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 600 V DC collector current, limited by Tjmax TC = 25 °C TC = 100 °C IC 80 2) 75 Pulsed collector current, tp limited by Tjmax ICpuls 225 Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C) - 225 Diode forward current, limited by Tjmax TC = 25 °C TC = 100 °C IF 80 2) 75 Diode pulsed current, tp limited by Tjmax IFpuls 225 A Gate-emitter voltage VGE ±20 V Short circuit withstand time 3) VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C tSC 5 µs Power dissipation TC = 25 °C Ptot 428 W Operating junction temperature Tj -40...+175 Storage temperature Tstg -55...+175 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 °C 1) J-STD-020 and JESD-022 2) Value limited by bondwire 3) Allowed number of short circuits: <1000; time between short circuits: >1s. G C E PG-TO-247-3 |
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