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IKW40N120T2 Datasheet(PDF) 7 Page - Infineon Technologies AG |
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IKW40N120T2 Datasheet(HTML) 7 Page - Infineon Technologies AG |
7 / 15 page IKW40N120T2 TrenchStop® 2nd Generation Series Power Semiconductors 7 Rev. 2.2 Sep 08 20A 40A 60A 1ns 10ns 100ns 1000ns t r t d(on) t f t d(off) 5Ω 15Ω 25Ω 35Ω 10 ns 100 ns 1000 ns t f t r t d(off) t d(on) IC, COLLECTOR CURRENT RG, GATE RESISTOR Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE=600V, VGE=0/15V, RG=12Ω, Dynamic test circuit in Figure E) Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=175°C, VCE=600V, VGE=0/15V, IC=40A, Dynamic test circuit in Figure E) 0°C 50°C 100°C 150°C 10ns 100ns t r t f t d(on) t d(off) 0°C 50°C 100°C 150°C 3.5V 4.0V 4.5V 5.0V 5.5V 6.0V 6.5V min. typ. max. TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=40A, RG=12Ω, Dynamic test circuit in Figure E) Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 1.5mA) |
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