PTF080101M datasheet(6/8 Pages) INFINEON

Part #	PTF080101M

Description	High Power RF LDMOS Field Effect Transistor 10 W, 450 ??960 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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6 / 8 page

Data Sheet

6 of 8

Rev. 02.1, 2009-02-18

PTF080101M

Reference Circuit (cont.)

Reference circuit assembly diagram (not to scale)*

*Gerber Files for this circuit available on request

Component

Description

Suggested Manufacturer P/N or Comment

C1, C2, C3

Capacitor, 0.001 µF

Digi-Key

PCC1772CT-ND

C4

Tantalum capacitor, 10 µF, 35 V

Digi-Key

PCS6106TR-ND

C5

Capacitor, 0.1 µF

Digi-Key

PCC104BCT-ND

C6, C8, C10, C11,

Ceramic capacitor, 36 pF

ATC

100B 360

C15

C7

Ceramic capacitor, 5.1 pF

ATC

100B 5R1

C9

Ceramic capacitor, 10 pF

ATC

100B 100

C12

Tantalum capacitor, 10 µF, 50 V

Garrett Electronics

TPS106K050R0400

C13

Capacitor, 1.0 µF

Toshiba

C4532XTRZA105M

C14

Ceramic capacitor, 4.5 pF

ATC

100B 4R5

C16

Ceramic capacitor, 3.1 pF

ATC

100B 3R1

Q1

Transistor

Infineon Technologies

BCP56

QQ1

Voltage regulator

National Semiconductor

LM7805

R1

Chip Resistor 1.2 k-ohms

Digi-Key

P1.2KGCT-ND

R2

Chip Resistor 1.3 k-ohms

Digi-Key

P1.3KGCT-ND

R3

Chip Resistor 1 k-ohms

Digi-Key

P1KECT-ND

R4

Potentiometer 2 k-ohms

Digi-Key

3224W-202ETR-ND

R5, R8

Chip Resistor 10 ohms

Digi-Key

P10ECT-ND

R6, R7

Chip Resistor 5.1 k-ohms

Digi-Key

P5.1KECT-ND

080101M_C_02

080101m_assy

RF_IN

RF_OUT

LM

C5

R8

R4

Q1

QQ1

C3

C1

R1

C2

R2

R5

C4

R3

C6

R6

R7

C7

C9

C8

C10

C11

C14

C12 C13

C16

C15

VDD

Similar Part No. - PTF080101M

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Infineon Technologies A...	PTF080101	64Kb / 4P	LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ 2004-03-08
	PTF080101S	64Kb / 4P	LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ 2004-03-08
	PTF080101S	172Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz 2004-10-05

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Similar Description - PTF080101M

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	PTF080601	293Kb / 6P	LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz 2003-12-05
	PTF080451	158Kb / 9P	LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz 2004-06-24
	PTF080901	205Kb / 10P	LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz 2004-04-05
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Tyco Electronics	MAPLST0810-045CF	136Kb / 4P	RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 45W, 26V
	MAPLST0810-090CF	138Kb / 4P	RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 90W, 26V
	MAPLST0810-090CF-05-2004	138Kb / 4P	RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 90W, 26V
	MAPLST0810-030CF-05-2004	137Kb / 4P	RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 30W, 26V
	MAPLST0810-030CF	137Kb / 4P	RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 30W, 26V
	MAPLST0810-045CF	136Kb / 4P	RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 45W, 26V

More results

PTF080101M Datasheet(PDF) 6 Page - Infineon Technologies AG

PTF080101M Datasheet(HTML) 6 Page - Infineon Technologies AG

Similar Part No. - PTF080101M

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