PTFA091201E datasheet(3/10 Pages) INFINEON

Part #	PTFA091201E

Description	Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 ??960 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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3 / 10 page

Data Sheet

3 of 10

Rev. 03, 2007-11-19

PTFA091201E

PTFA091201F

Confidential, Limited Internal Distribution

Intermodulation Distortion vs. Output Power

(as measured in a broadband circuit)

VDD = 28 V, IDQ = 750 mA, ƒ1 = 959 MHz, ƒ2 = 960 MHz

-70

-60

-50

-40

-30

-20

-10

37

39

41

43

45

47

49

Output Power, Avg. (dBm)

3rd Order

7th

5th

CW Sweep in a Broadband Test Fixture

VDD = 28 V, IDQ = 750 mA, POUT = 50.79 dBm

16

17

18

19

20

21

900

910

920

930

940

950

960

970

980

Frequency (MHz)

20

30

40

50

60

70

Gain

Return Loss

Efficiency

-15

-25

-35

Typical Performance (data taken in a production test fixture)

*See Infineon distributor for future availability.

IM3 vs. Output Power at Selected Biases

VDD = 28 V, ƒ1 = 959, ƒ2 = 960 MHz,

series show IDQ

-60

-55

-50

-45

-40

-35

-30

-25

-20

37

39

41

43

45

47

49

Output Power, Avg. (dBm)

525 mA

940 mA

750 mA

Power Sweep

VDD = 28 V, ƒ = 960 MHz

17.5

18.0

18.5

19.0

19.5

20.0

20.5

40

42

44

46

48

50

52

Output Power (dBm)

IDQ = 1125 mA

IDQ = 375 mA

IDQ = 750 mA

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PTFA091201E Datasheet(PDF) 3 Page - Infineon Technologies AG

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