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IDP12E120 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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IDP12E120 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 8 page 2009-08-19 Rev.2 .3 Page 1 IDP12E120 Fast Switching Diode Product Summary VRRM 1200 V IF 12 A VF 1.65 V Tjmax 150 °C Pin 1 PIN 2 PIN 3 C A - Marking D12E120 Type Package Ordering Code IDP12E120 P G-TO220-2 - Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Repetitive peak reverse voltage VRRM 1200 V Continous forward current TC=25°C TC=90°C IF 28 17 A Surge non repetitive forward current TC=25°C, tp=10 ms, sine halfwave IFSM 63 Maximum repetitive forward current TC=25°C, tp limited by Tjmax, D=0.5 IFRM 42.5 Power dissipation TC=25°C TC=90°C Ptot 96 46 W Operating and storage temperature Tj , Tstg -55...+150 °C Soldering temperature wavesoldering, 1.6mm (0.063 in.) from case for 10s TS 260 °C Feature s • 1200 V diode technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage • Easy paralleling • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 • Qualified according to JEDEC for target applications P G-TO220-2 |
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