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SKW20N60 Datasheet(PDF) 3 Page - Infineon Technologies AG |
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SKW20N60 Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 13 page SKW20N60 3 Rev. 2_2 Sep 08 Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 36 46 Rise time tr - 30 36 Turn-off delay time td(off) - 225 270 Fall time tf - 54 65 ns Turn-on energy Eon - 0.44 0.53 Turn-off energy Eoff - 0.33 0.43 Total switching energy Ets Tj=25 °C, VCC=400V,IC=20A, VGE=0/15V, RG=16 Ω, Lσ 1) =180nH, Cσ 1) =900pF Energy losses include “tail” and diode reverse recovery. - 0.77 0.96 mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF - - - 300 30 270 - - - ns Diode reverse recovery charge Qrr - 490 - nC Diode peak reverse recovery current Irrm - 5.5 - A Diode peak rate of fall of reverse recovery current during tb dirr/dt Tj=25 °C, VR=200V, IF=20A, diF/dt=200A/ µs - 180 - A/ µs Switching Characteristic, Inductive Load, at Tj=150 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 36 46 Rise time tr - 30 36 Turn-off delay time td(off) - 250 300 Fall time tf - 63 76 ns Turn-on energy Eon - 0.67 0.81 Turn-off energy Eoff - 0.49 0.64 Total switching energy Ets Tj=150 °C VCC=400V,IC=20A, VGE=0/15V, RG=16 Ω, Lσ 1) =180nH, Cσ 1) =900pF Energy losses include “tail” and diode reverse recovery. - 1.12 1.45 mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF - - - 410 45 365 - - - ns Diode reverse recovery charge Qrr - 1270 - nC Diode peak reverse recovery current Irrm - 8.5 - A Diode peak rate of fall of reverse recovery current during tb dirr/dt Tj=150 °C VR=200V, IF=20A, diF/dt=200A/ µs - 200 - A/ µs 1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E. |
Similar Part No. - SKW20N60_08 |
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Similar Description - SKW20N60_08 |
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