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SPB17N80C3 Datasheet(PDF) 3 Page - Infineon Technologies AG

Part # SPB17N80C3
Description  CoolMOS짰 Power Transistor Features new revolutionary high voltage technology
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SPB17N80C3 Datasheet(HTML) 3 Page - Infineon Technologies AG

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SPB17N80C3
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
C iss
-
2300
-
pF
Output capacitance
C oss
-
100
-
Effective output capacitance, energy
related
5)
C o(er)
-72-
Effective output capacitance, time
related
6)
C o(tr)
-
210
-
Turn-on delay time
t d(on)
-45-
ns
Rise time
t r
-18-
Turn-off delay time
t d(off)
-85-
Fall time
t f
-15-
Gate Charge Characteristics
Gate to source charge
Q gs
-12-
nC
Gate to drain charge
Q gd
-48-
Gate charge total
Q g
-
91
177
Gate plateau voltage
V plateau
-
5.5
-
V
Reverse Diode
Diode forward voltage
V SD
V GS=0 V, I F=IS,
T j=25 °C
-
1
1.2
V
Reverse recovery time
t rr
-
550
-
ns
Reverse recovery charge
Q rr
-15-
µC
Peak reverse recovery current
I rrm
-51-
A
5) C
o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
6) C
o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Values
V GS=0 V, V DS=100 V,
f =1 MHz
V DD=400 V,
V GS=0/10 V, I D=17 A,
R G=4.7 Ω,
Tj = 125°C
V DD=640 V, I D=17 A,
V GS=0 to 10 V
V GS=0 V, V DS=0 V
to 480 V
4) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB
is vertical without blown air
V R=400 V, I F=I S,
di F/dt =100 A/µs
2) Pulse width t
p limited by T j,max
3) Repetitive avalanche causes additional power losses that can be calculated asP
AV=E AR*f.
1) J-STD20 and JESD22
Rev. 2.3
page 3
2007-11-28


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