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SPB17N80C3 Datasheet(PDF) 3 Page - Infineon Technologies AG |
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SPB17N80C3 Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 10 page SPB17N80C3 Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 2300 - pF Output capacitance C oss - 100 - Effective output capacitance, energy related 5) C o(er) -72- Effective output capacitance, time related 6) C o(tr) - 210 - Turn-on delay time t d(on) -45- ns Rise time t r -18- Turn-off delay time t d(off) -85- Fall time t f -15- Gate Charge Characteristics Gate to source charge Q gs -12- nC Gate to drain charge Q gd -48- Gate charge total Q g - 91 177 Gate plateau voltage V plateau - 5.5 - V Reverse Diode Diode forward voltage V SD V GS=0 V, I F=IS, T j=25 °C - 1 1.2 V Reverse recovery time t rr - 550 - ns Reverse recovery charge Q rr -15- µC Peak reverse recovery current I rrm -51- A 5) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 6) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. Values V GS=0 V, V DS=100 V, f =1 MHz V DD=400 V, V GS=0/10 V, I D=17 A, R G=4.7 Ω, Tj = 125°C V DD=640 V, I D=17 A, V GS=0 to 10 V V GS=0 V, V DS=0 V to 480 V 4) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air V R=400 V, I F=I S, di F/dt =100 A/µs 2) Pulse width t p limited by T j,max 3) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f. 1) J-STD20 and JESD22 Rev. 2.3 page 3 2007-11-28 |
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