SKW20N60HS datasheet(11/14 Pages) INFINEON

Part #	SKW20N60HS

Description	High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation

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Manufacturer	INFINEON [Infineon Technologies AG]

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SKW20N60HS

Power Semiconductors

11

Rev. 2.3

Sep 08

0,0V

0,5V

1,0V

1,5V

0A

10A

20A

30A

150°C

25°C

T

J=-55°C

-50°C

0°C

50°C

100°C

150°C

1,2V

1,4V

1,6V

1,8V

2,0V

I

F=40A

I

F=20A

I

F=10A

VF, FORWARD VOLTAGE

TJ, JUNCTION TEMPERATURE

Figure 25. Typical diode forward current as

a function of forward voltage

Figure 26. Typical diode forward voltage as a

function of junction temperature

1µs

10µs

100µs

1m s

10m s 100m s

10

-2K/W

10

-1K/W

10

0K/W

single pulse

0.01

0.02

0.05

0.1

0.2

D=0.5

tP, PULSE WIDTH

Figure 27. Diode transient thermal

impedance as a function of pulse

width

(D=tP/T)

C 1=

τ1/R1

R 1

R 2

C 2=

τ2/R2

R

,(K/W)

τ , (s )

0.311

7.83*10

-2

0.271

1.21*10

-2

0.221

1.36*10

-3

0.584

1.53*10

-4

0.314

2.50*10

-5

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SKW20N60HS Datasheet(PDF) 11 Page - Infineon Technologies AG

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