PTFA260851E datasheet(7/11 Pages) INFINEON

Part #	PTFA260851E

Description	Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 ??2700 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

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7 / 11 page

Data Sheet

7 of 11

Rev. 02.1, 2009-02-20

PTFA260851E

PTFA260851F

Confidential, Limited Internal Distribution

Reference Circuit

Reference circuit schematic for ƒ = 2650 MHz

Circuit Assembly Information

DUT

PTFA260851E or PTFA260851F

LDMOS Transistor

PCB

0.76 mm [.030"] thick,

εr = 4.5

TMM4

2 oz. copper

Microstrip

Electrical Characteristics at 2650 MHz1

Dimensions: L x W ( mm) Dimensions: L x W (in.)

l1

0.121

λ, 46.9 Ω

7.42 x 1.52

0.292 x 0.060

l2

0.135

λ, 40.5 Ω

8.20 x 1.93

0.323 x 0.076

l3

0.021

λ, 40.5 Ω

1.27 x 1.93

0.050 x 0.076

l4

0.028

λ, 14.7 Ω

1.60 x 7.54

0.063 x 0.297

l5

0.079

λ, 8.3 Ω

4.37 x 14.66

0.172 x 0.577

l6

0.008

λ, 57.9 Ω

0.51 x 1.04

0.020 x 0.041

l7

0.272

λ, 57.9 Ω

16.79 x 1.04

0.661 x 0.041

l8

0.278

λ, 49.3 Ω

16.89 x 1.40

0.665 x 0.055

l9

0.278

λ, 49.3 Ω

16.89 x 1.40

0.665 x 0.055

l10

0.060

λ, 5.2 Ω

3.28 x 24.36

0.129 x 0.959

l11 (taper)

0.113

λ, 5.2 Ω / 49.3 Ω

6.73 x 24.36 / 1.40

0.265 x 0.959 / 0.055

l12

0.048

λ, 49.3 Ω

2.97 x 1.40

0.117 x 0.055

l13

0.095

λ, 49.3 Ω

5.84 x 1.40

0.230 x 0.055

l14

0.070

λ, 49.3 Ω

4.29 x 1.40

0.169 x 0.055

1Electrical characteristics are rounded.

R3

2K V

C3

0.001µF

C2

0.001µF

Q1

BCP56

R2

1.3K V

QQ1

LM7805

VDD

R5

5.1K V

R4

2K V

R1

1.2K V

C7

4.5pF

l1

DUT

C5

0.01µF

C4

10µF

35V

C6

4.5pF

R7

5.1K V

R6

10 V

C8

1.5pF

l2

l4

l5

l8

l9

VDD

L2

C9

4.5pF

C10

1µF

C12

10µF

50V

C18

4.5pF

C14

1µF

C16

10µF

50V

C17

0.1pF

l12

l13

l14

l11

C11

0.01µF

C15

0.01µF

l10

C13

4.5pF

L1

l6

R8

10 V

l7

RF_OUT

RF_IN

a260851ef_bd_2-1-08

C1

0.001µF

l3

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