IPP085N06LG datasheet(2/10 Pages) INFINEON

Part #	IPP085N06LG

Description	OptiMOS??Power-Transistor Features For fast switching converters and sync. rectification

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPB085N06L G

IPP085N06L G

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

Thermal resistance, junction - case

R thJC

-

0.8

K/W

SMD version, device on PCB

R thJA

minimal footprint

-

62

6 cm

2 cooling area3)

--

40

Electrical characteristics,

at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=1 mA

60

-

V

Gate threshold voltage

V GS(th)

V DS=V GS, I D=125 µA

1.2

1.6

2

Zero gate voltage drain current

I DSS

V DS=60 V, V GS=0 V,

T j=25 °C

-

0.01

1

µA

V DS=60 V, V GS=0 V,

T j=125 °C

-

1

100

Gate-source leakage current

I GSS

V GS=20 V, V DS=60 V

-

1

100

nA

Drain-source on-state resistance

R DS(on)

V GS=10 V, I D=80 A

-

7.0

8.5

m

Ω

V GS=4.5 V, I D=53 A

-

8.7

12

V GS=10 V, I D=80 A,

SMD version

6.7

8.2

V GS=4.5 V, I D=53 A,

SMD version

8.4

11.7

Gate resistance

R G

-

2.3

-

Ω

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=80 A

54

107

-

S

3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Values

Rev. 1.05

page 2

2010-01-19

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