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LP4951C Datasheet(PDF) 2 Page - National Semiconductor (TI) |
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LP4951C Datasheet(HTML) 2 Page - National Semiconductor (TI) |
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2 / 14 page  Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Input Supply Voltage −0.3 to +30V SHUTDOWN Input Voltage, Error Comparator Output Voltage, (Note 9) −0.3 to +30V FEEDBACK Input Voltage −1.5 to +30V (Note 9) (Note 10) Power Dissipation Internally Limited Junction Temperature (T J) +150˚C Ambient Storage Temperature −65˚ to +150˚C Soldering Dwell Time, Temperature Wave Infrared Vapor Phase 4 seconds, 260˚C 10 seconds, 240˚C 75 seconds, 219˚C ESD TBD Operating Ratings (Note 1) Maximum Input Supply Voltage 30V Junction Temperature Range (Note 8) LP4950C, LP4951C −40˚C to 125˚C Electrical Characteristics (Note 2) Parameter Conditions (Note 2) LP4950CZ Units LP4951CM Tested Design Typ Limit Limit (Note 3) (Note 4) Output Voltage T J = 25˚C 5.0 5.1 V max 4.9 V min −25˚C ≤ T J ≤ 85˚C 5.15 V max 4.85 V min Full Operating 5.2 V max Temperature Range 4.8 V min Output Voltage 100 µA ≤ I L ≤ 100 mA 5.24 V max T J ≤ T JMAX 4.76 V min Output Voltage Temperature Coefficient (Note 12) 150 ppm/˚C Line Regulation (Note 14) 6V ≤ V IN ≤ 30V (Note 15) 0.04 0.2 % max 0.4 % max Load Regulation (Note 14) 100µA ≤ I L ≤ 100mA 0.1 0.2 % max 0.3 % max Dropout Voltage (Note 5) I L = 100µA 50 80 mV max 150 mV max I L = 100mA 380 450 mV max 600 mV max Ground Current I L = 100µA 75 150 µA max 170 µA max I L = 100mA 8 15 mA max 19 mA max Dropout Ground Current V IN = 4.5V 110 200 µA max I L = 100µA 230 µA max Current Limit V OUT = 0 160 200 mA max 220 mA max Thermal Regulation (Note 13) 0.05 0.2 %/W max Output Noise, C L = 1µF 430 µV rms 10 Hz to 100 kHz C L = 200µF 160 µV rms C L = 3.3µF (Bypass = 0.01µF Pins 7 to 1 (LP4951C) 100 µV rms www.national.com 2 |
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