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PTFA192401F Datasheet(PDF) 2 Page - Infineon Technologies AG |
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PTFA192401F Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 11 page Data Sheet 2 of 11 Rev. 02, 2009-04-01 PTFA192401E PTFA192401F Confidential, Limited Internal Distribution RF Characteristics WCDMA Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 1.6 A, POUT = 50 W average ƒ1 = 1955 MHz, ƒ2 = 1965 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 15 16 — dB Drain Efficiency ηD 25 27 — % Intermodulation Distortion IMD — –36 –34 dBc Two-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 30 V, IDQ = 1.6 A, POUT = 220 W PEP, ƒ = 1960 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps — 15.8 — dB Drain Efficiency ηD — 40 — % Intermodulation Distortion IMD — –28 — dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA Drain Leakage Current VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.03 — Ω Operating Gate Voltage VDS = 30 V, IDQ = 1.6 A VGS 2.0 2.5 3.0 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 761 W Above 25°C derate by 4.35 W/°C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 50 W WCDMA) RθJC 0.23 °C/W |
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