PTFA192401F datasheet(2/11 Pages) INFINEON

Part #	PTFA192401F

Description	Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 ??1990 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

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Data Sheet

2 of 11

Rev. 02, 2009-04-01

PTFA192401E

PTFA192401F

Confidential, Limited Internal Distribution

RF Characteristics

WCDMA Measurements (tested in Infineon test fixture)

VDD = 30 V, IDQ = 1.6 A, POUT = 50 W average

ƒ1 = 1955 MHz, ƒ2 = 1965 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

Gps

15

16

—

dB

Drain Efficiency

ηD

25

27

—

%

Intermodulation Distortion

IMD

—

–36

–34

dBc

Two-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)

VDD = 30 V, IDQ = 1.6 A, POUT = 220 W PEP, ƒ = 1960 MHz, tone spacing = 1 MHz

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

Gps

—

15.8

—

dB

Drain Efficiency

ηD

—

40

—

%

Intermodulation Distortion

IMD

—

–28

—

dBc

DC Characteristics

Characteristic

Conditions

Symbol

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VGS = 0 V, IDS = 10 mA

V(BR)DSS

65

—

V

Drain Leakage Current

VDS = 28 V, VGS = 0 V

IDSS

—

1.0

µA

Drain Leakage Current

VDS = 63 V, VGS = 0 V

IDSS

—

10.0

µA

On-State Resistance

VGS = 10 V, VDS = 0.1 V

RDS(on)

—

0.03

—

Ω

Operating Gate Voltage

VDS = 30 V, IDQ = 1.6 A

VGS

2.0

2.5

3.0

V

Gate Leakage Current

VGS = 10 V, VDS = 0 V

IGSS

—

1.0

µA

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDSS

65

V

Gate-Source Voltage

VGS

–0.5 to +12

V

Junction Temperature

TJ

200

°C

Total Device Dissipation

PD

761

W

Above 25°C derate by

4.35

W/°C

Storage Temperature Range

TSTG

–40 to +150

°C

Thermal Resistance (TCASE = 70°C, 50 W WCDMA)

RθJC

0.23

°C/W

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