BTS5012SDA datasheet(7/27 Pages) INFINEON

Part #	BTS5012SDA

Description	Smart High-Side Power Switch PROFET??One Channel

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Manufacturer	INFINEON [Infineon Technologies AG]

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Datasheet

7

Rev. 1.1, 2008-11-04

Smart High-Side Power Switch

BTS5012SDA

General Product Characteristics

4

General Product Characteristics

4.1

Absolute Maximum Ratings

Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute

maximum rating conditions for extended periods may affect device reliability.

Absolute Maximum Ratings 1)

T

j= 25 °C (unless otherwise specified)

1) Not subject to production test, specified by design.

Pos.

Parameter

Symbol

Limit Values

Unit

Conditions

Min.

Max.

Supply Voltages

4.1.1

Supply voltage

V

bb

-16

38

V

–

4.1.2

Supply voltage for short circuit protection

(single pulse)2)

2) Short circuit is defined as a combination of remaining resistances and inductances. See Figure 13.

V

bb(SC)

020

V

–

4.1.3

Supply Voltage for Load Dump

protection3)

3) Load Dump is specified in ISO 7637, RI is the internal resistance of the Load Dump pulse generator.

V

bb(LD)

–45

V

R

I = 2 Ω,

R

L = 1.5 Ω,

Logic Pins

4.1.4

Voltage at input pin

V

bIN

-16

63

V

–

4.1.5

Current through input pin

I

IN

-140

15

mA

–

4.1.6

Voltage at current sense pin

V

bIS

-16

63

V

–

4.1.7

Current through sense pin

I

IS

-140

15

mA

–

4.1.8

Input voltage slew rate 4)

4) Slew rate limitation can be achieved by means of using a series resistor for the small signal driver or in series in the input

path. A series resistor RIN in the input path is also required for reverse operation at Vbb≤-16V. See also Figure 14.

dV

bIN/dt

-20

20

V/µs

–

Power Stages

4.1.9

Load current 5)

5) Current limitation is a protection feature. Operation in current limitation is considered as “outside” normal operating range.

Protection features are not designed for continuous repetitive operation.

I

L

-

I

Lx(SC)

A–

4.1.10

Maximum energy dissipation per

channel (single pulse)

E

AS

-0.2

J

V

bb = 12 V,

I

L(0) = 20 A,

T

j(0) = 150 °C

Temperatures

4.1.11

Junction temperature

T

j

-40

150

°C

–

4.1.12

Storage temperature

T

stg

-55

150

°C

–

ESD Susceptibility

4.1.13

ESD susceptibility HBM

Pin 2 (IN)

Pin 4 (IS)

Pin1/5 (OUT)

V

ESD

-2

-4

2

4

kV

according to

EIA/JESD 22-A

114B

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