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IPT20Q08-TEB Datasheet(PDF) 1 Page - IP SEMICONDUCTOR CO., LTD.

Part # IPT20Q08-TEB
Description  High current density due to double mesa technology
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Manufacturer  IPS [IP SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.ipsemiconductor.com
Logo IPS - IP SEMICONDUCTOR CO., LTD.

IPT20Q08-TEB Datasheet(HTML) 1 Page - IP SEMICONDUCTOR CO., LTD.

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IP Semiconductor Co., Ltd.
IPT20Q08-xxB
Symbol
Value
Unit
IT(RMS)
20
A
VDRM / VRRM
800
V
VTM
≤ 1.65
V
MAIN FEATURES
ABSOLUTE MAXIMUM RATINGS
1
High current density due to double mesa technology;
SIPOS and Glass Passivation. IPT20Q08-xx series are
suitable for general purpose AC Switching.
They can be used as an ON/OFF function In application
such as static relays, heating regulation, Induction
motor stating circuits… or for phase Control operation
light dimmers, motor speed Controllers.
Parameter
Symbol
Value
Unit
Storage Junction Temperature Range
Operating Junction Temperature Range
Tstg
Tj
-40 to +150
-40 to +125
Repetitive Peak Off-state Voltage
Tj = 25℃
Repetitive Peak Reverse Voltage
VDRM
VRRM
800
800
V
Non Repetitive Peak Off-state Voltage
Tj = 25℃
Non Repetitive Peak Reverse Voltage
VDSM
VRSM
900
900
V
RMS on
–state current
Tc = 70℃
(360º conduction angle )
IT(RMS)
20
A
Non repetitive surge peak on
–state Current
t = 8.3ms
(full cycle, Tj = 25℃)
t = 10ms
ITSM
210
200
A
I²t Value for fusing
tp = 10ms
I²t
200
A²s
Critical Rate of rise of on-state current
Repetitive F = 50Hz
Gate supply : IG = 500mA dIG/dt = 1A/us
Non repetitive
dI / dt
20
100
A/us
Peak gate current
tp = 20us, Tj = 125 ℃
IGM
8
A
Average gate power dissipation
Tj = 125 ℃
PG(AV)
1
W
TO-220B
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com


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