SKP06N60 datasheet(8/15 Pages) INFINEON

Part #	SKP06N60

Description	Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

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Manufacturer	INFINEON [Infineon Technologies AG]

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SKP06N60

SKA06N60

8

Rev. 2.3

Sep 07

0nC

15nC

30nC

45nC

0V

5V

10V

15V

20V

25V

480V

120V

0V

10V

20V

30V

10pF

100pF

1nF

C

rss

C

oss

C

iss

QGE, GATE CHARGE

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 16. Typical gate charge

(IC = 6A)

Figure 17. Typical capacitance as a

function of collector-emitter voltage

(VGE = 0V, f = 1MHz)

10V

11V

12V

13V

14V

15V

0

µs

5

µs

10

µs

15

µs

20

µs

25

µs

10V

12V

14V

16V

18V

20V

0A

20A

40A

60A

80A

100A

VGE, GATE-EMITTER VOLTAGE

Figure 18. Short circuit withstand time as a

function of gate-emitter voltage

(VCE = 600V, start at Tj = 25°C)

Figure 19. Typical short circuit collector

current as a function of gate-emitter voltage

(VCE ≤ 600V, Tj = 150°C)

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SKP06N60 Datasheet(PDF) 8 Page - Infineon Technologies AG

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