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IPP040N06N3G Datasheet(PDF) 3 Page - Infineon Technologies AG |
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IPP040N06N3G Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 11 page IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 8000 11000 pF Output capacitance C oss - 1700 2300 Reverse transfer capacitance C rss -58 87 Turn-on delay time t d(on) -30- ns Rise time t r -70- Turn-off delay time t d(off) -40- Fall time t f -5 - Gate Charge Characteristics 5) Gate to source charge Q gs -42- nC Gate to drain charge Q gd -9 - Switching charge Q sw -27- Gate charge total Q g -98- Gate plateau voltage V plateau - 5.3 - V Output charge Q oss V DD=30 V, V GS=0 V -79- nC Reverse Diode Diode continous forward current I S - - 90 A Diode pulse current I S,pulse - - 360 Diode forward voltage V SD V GS=0 V, I F=90 A, T j=25 °C - 0.97 1.2 V Reverse recovery time t rr - 125 - ns Reverse recovery charge Q rr - 110 - nC 5) See figure 16 for gate charge parameter definition V R=30 V, IF=50A, di F/dt =100 A/µs T C=25 °C Values V GS=0 V, V DS=30 V, f =1 MHz V DD=30 V, V GS=10 V, I D=90 A, R G=3.5 Ω V DD=30 V, I D=90 A, V GS=0 to 10 V Rev. 1.03 page 3 2009-12-17 |
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