PTFA212401E datasheet(5/11 Pages) INFINEON

Part #	PTFA212401E

Description	Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ??2170 MHz

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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5 / 11 page

Data Sheet

5 of 11

Rev. 04, 2009-10-05

PTFA212401E

PTFA212401F

Confidential, Limited Internal Distribution

Typical Performance (cont.)

Power Gain vs. Power Sweep (CW) over

Temperature

VDD = 30 V, IDQ = 1500 mA, ƒ = 2140 MHz

12

13

14

15

16

17

18

1

10

100

1000

Output Power (W)

-15C

25C

85C

Two-carrier WCDMA Drive-up

VDD = 30 V, IDQ = 1600 mA, ƒ = 2140 MHz,

3GPP WCDMA signal, PAR = 8 dB,

10 MHz carrier spacing

-55

-50

-45

-40

-35

-30

-25

34

36

38

40

42

44

46

48

Output Power, avg. (dBm)

5

10

15

20

25

30

35

ACPR

Efficiency

IM3

Two-tone Drive-up

VDD = 30 V, IDQ = 1600 mA,

ƒ = 2140 MHz, tone spacing = 1 MHz

-65

-60

-55

-50

-45

-40

-35

-30

-25

44

46

48

50

52

54

Output Power, PEP (dBm)

10

15

20

25

30

35

40

45

50

IM5

Efficiency

IM7

IM3

Output Peak-to-Average Ratio Compression

(PARC) at various Power Levels

VDD = 30 V, IDQ = 1600 mA, ƒ = 2170 MHz,

single-carrier WCDMA input PAR = 7.5 dB

0.001

0.01

0.1

1

10

100

1

2

3

4

5

6

7

8

Peak-to-Average (dB)

52 dBm

51 dBm

50 dBm

48 dBm

46 dBm

Input

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PTFA212401E Datasheet(PDF) 5 Page - Infineon Technologies AG

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