| Manufacturer | Part # | Datasheet | Description |
Infineon Technologies A... |
IPI057N08N3G
|
526Kb / 11P |
OptiMOS 3 Power-Transistor Features N-channel, normal level
Rev. 1.0 2008-01-25 |
|
IPB051NE8NG
|
503Kb / 11P |
OptiMOS?? Power-Transistor Features N-channel, normal level 175 째C operating temperature
Rev. 1.2 2010-01-14 |
|
IPB320N20N3G
|
426Kb / 11P |
OptiMOSTM3 Power-Transistor Features N-channel, normal level
Rev. 2.2 2009-10-22 |
|
IPB08CN10NG
|
413Kb / 11P |
OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
Rev. 1.08 2010-04-26 |
|
IPB200N15N3
|
556Kb / 12P |
OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
Rev. 2.05 2010-04-28 |
|
IPB072N15N3G
|
424Kb / 11P |
OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
Rev. 2.06 2010-04-19 |
|
IPP086N10N3G
|
480Kb / 12P |
OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
Rev. 2.5 2010-07-16 |
|
IPD400N06NG
|
509Kb / 9P |
OptiMOS짰 Power-Transistor Features N-channel enhancement - normal level Avalanche rated
Rev. 1.3 2008-09-01 |
|
IPB107N20N3G
|
452Kb / 11P |
OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
Rev. 2.2 2009-10-21 |
STMicroelectronics |
STL6P3LLH6
|
578Kb / 15P |
Very low on-resistance
November 2014 Rev 3 |
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