IPD090N03L datasheet(1/12 Pages) INFINEON

Part #	IPD090N03L

Description	OptiMOS3 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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Type

IPD090N03L G

IPF090N03L G

IPS090N03L G

IPU090N03L G

OptiMOS®3 Power-Transistor

Features

• Fast switching MOSFET for SMPS

• Optimized technology for DC/DC converters

• Qualified according to JEDEC

1) for target applications

• N-channel, logic level

• Excellent gate charge x R DS(on) product (FOM)

• Very low on-resistance R DS(on)

• Avalanche rated

• Pb-free plating; RoHS compliant

• Avalanche rated

• Pb-free plating; RoHS compliant

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Continuous drain current

I D

V GS=10 V, T C=25 °C

40

A

V GS=10 V, T C=100 °C

37

V GS=4.5 V, T C=25 °C

40

V GS=4.5 V,

T C=100 °C

30

Pulsed drain current

2)

I D,pulse

T C=25 °C

280

Avalanche current, single pulse

3)

I AS

T C=25 °C

40

Avalanche energy, single pulse

E AS

I D=12 A, R GS=25 Ω

40

mJ

Reverse diode dv /dt

dv /dt

I D=40 A, V DS=24 V,

di /dt =200 A/µs,

T j,max=175 °C

6

kV/µs

Gate source voltage

V GS

±20

V

Value

1) J-STD20 and JESD22

V DS

30

V

R DS(on),max

9

m

Ω

I D

40

A

Product Summary

Type

IPD090N03L G

IPF090N03L G

IPS090N03L G

IPU090N03L G

Package

PG-TO252-3-11

PG-TO252-3-23

PG-TO251-3-11

PG-TO251-3-21

Marking

090N03L

Rev. 1.0

page 1

2006-10-23

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IPD090N03L Datasheet(PDF) 1 Page - Infineon Technologies AG

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