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SPD30P06P Datasheet(PDF) 1 Page - Infineon Technologies AG |
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SPD30P06P Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 10 page 2008-09-02 Rev 2.3 Page 1 SPD30P06P G SIPMOS® Power-Transistor Features · P-Channel · Enhancement mode · Avalanche rated · dv/dt rated · 175°C operating temperature Product Summary Drain source voltage V VDS -60 Drain-source on-state resistance RDS(on) 0.075 W Continuous drain current A ID -30 Type Package SPD30P06P G PG-TO252-3 Pin 1 PIN 2/4 PIN 3 G D S Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Unit Value -30 -21.5 A Continuous drain current TC = 25 °C TC = 100 °C ID Pulsed drain current TC = 25 °C ID puls -120 Avalanche energy, single pulse ID = -30 A , VDD = -25 V, RGS = 25 W 250 mJ EAS Avalanche energy, periodic limited by Tjmax EAR 12.5 d v/dt 6 Reverse diode d v/dt IS = -30 A, VDS = -48 V, di/dt = 200 A/µs, Tjmax = 175 °C kV/µs Gate source voltage VGS ±20 V Power dissipation TC = 25 °C Ptot 125 W Operating and storage temperature Tj , Tstg -55...+175 °C IEC climatic category; DIN IEC 68-1 55/175/56 ° Pb-free lead plating; RoHS compliat |
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