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SPD08P06P Datasheet(PDF) 2 Page - Infineon Technologies AG |
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SPD08P06P Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 9 page SPD08P06 P G G Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - K/W Thermal resistance, junction - ambient,leaded R thJA - - - SMD version, device on PCB: R thJA minimal footprint - - 75 K/W 6 cm 2 cooling area1) - - 70 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250 µA -60 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=-250 µA -2.1 -3.0 -4 Zero gate voltage drain current I DSS V DS=-60 V, V GS=0 V, T j=25 °C - -0.1 -1 µA V DS=-60 V, V GS=0 V, T j=150 °C - -10 -100 Gate-source leakage current I GSS V GS=-20 V, V DS=0 V - -10 -100 nA Drain-source on-state resistance R DS(on) V GS=-6.2 V, I D=-10 A - 230 300 m Ω Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-6.2 A 2.5 4.9 - S 1) Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 ( one layer, 70µ, thick) copper area for drain connection. PCB is vertical without blown air. Values Rev 1. 9 page 2 200 8-10-13 3.6 50 |
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