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IRG7PH35UDPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRG7PH35UDPBF Datasheet(HTML) 1 Page - International Rectifier |
1 / 11 page INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRG7PH35UDPbF IRG7PH35UD-EP 1 www.irf.com 02/08/10 E G n-channel C Features • Low VCE (ON) trench IGBT technology • Low switching losses • Square RBSOA • 100% of the parts tested for ILM • Positive VCE (ON) temperature co-efficient • Ultra fast soft recovery co-pak diode • Tight parameter distribution • Lead-Free Benefits • High efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses • Rugged transient performance for increased reliability • Excellent current sharing in parallel operation Applications • U.P.S. • Welding • Solar Inverter • Induction Heating GC E Gate Collector Emitter TO-247AC IRG7PH35UDPbF TO-247AD IRG7PH35UD-EP G C E C G C E C VCES = 1200V I NOMINAL = 20A TJ(max) = 150°C VCE(on) typ. = 1.9V Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 1200 V IC @ TC = 25°C Continuous Collector Current 50 IC @ TC = 100°C Continuous Collector Current 25 INOMINAL Nominal Current 20 ICM Pulse Collector Current, VGE=15V 60 ILM Clamped Inductive Load Current, VGE=20V c 80 IF @ TC = 25°C Diode Continous Forward Current 50 IF @ TC = 100°C Diode Continous Forward Current 25 IFM Diode Maximum Forward Current d 80 VGE Continuous Gate-to-Emitter Voltage ±30 V PD @ TC = 25°C Maximum Power Dissipation 180 PD @ TC = 100°C Maximum Power Dissipation 70 TJ Operating Junction and -55 to +150 TSTG Storage Temperature Range Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) Thermal Resistance Parameter Min. Typ. Max. Units RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) f ––– ––– 0.70 RθJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 0.65 RθCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 ––– RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 40 ––– °C/W A W °C PD-96288 |
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