SPD50N03S2-07_08 datasheet(3/9 Pages) INFINEON

Part #	SPD50N03S2-07

Description	OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated

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Manufacturer	INFINEON [Infineon Technologies AG]

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SPD50N03S2-07 G

Electrical Characteristics

Parameter

Symbol

Conditions

Values

Unit

min.

typ.

max.

Dynamic Characteristics

Transconductance

gfs

VDS≥2*ID*RDS(on)max,

ID=50A

30

60

-

S

Input capacitance

Ciss

VGS=0V, VDS =25V,

f=1MHz

-

1630

2170 pF

Output capacitance

Coss

-

750

1000

Reverse transfer capacitance

Crss

-

150

230

Turn-on delay time

td(on)

VDD=15V, VGS =10V,

ID=50A,

RG=6.8Ω

-

14

21

ns

Rise time

tr

-

36

54

Turn-off delay time

td(off)

-

27

40

Fall time

tf

-

25

38

Gate Charge Characteristics

Gate to source charge

Qgs

VDD=24V, ID=50A

-

7.9

10.5

nC

Gate to drain charge

Qgd

-

14.1

21.1

Gate charge total

Qg

VDD=24V, ID=50A,

VGS=0 to 10V

-

35

46.5

Gate plateau voltage

V(plateau) VDD=24V, ID=50A

-

5.2

-

V

Reverse Diode

Inverse diode continuous

forward current

IS

TC=25°C

-

50

A

Inv. diode direct current, pulsed

ISM

-

200

Inverse diode forward voltage

VSD

VGS=0V, IF=50A

-

0.9

1.3

V

Reverse recovery time

trr

VR=15V, IF=lS,

diF/dt=100A/µs

-

41

51

ns

Reverse recovery charge

Qrr

-

46

58

nC

02-09-2008

Page 3

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