SPA11N60C3E8185 datasheet(7/16 Pages) INFINEON

Part #	SPA11N60C3E8185

Description	Cool MOS??Power Transistor Feature New revolutionary high voltage technology

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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7 / 16 page

200

9-11-27

Rev.

3.2

Page 7

SPP11N60C3

SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185

9 Typ. drain-source on resistance

RDS(on)=f(ID)

parameter: Tj=150°C, VGS

0

2

4

6

8

10

12

14

16

A

20

ID

0.4

0.6

0.8

1

1.2

1.4

1.6

Ω

2

4V

4.5V

5V

5.5V

6V

6.5V

8V

20V

10 Drain-source on-state resistance

RDS(on) = f (Tj)

parameter : ID = 7 A, VGS = 10 V

-60

-20

20

60

100

°C

180

Tj

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

Ω

2.1

SPP11N60C3

typ

98%

11 Typ. transfer characteristics

ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max

parameter: tp = 10 µs

0

2

4

6

8

10

12

V

15

VGS

0

4

8

12

16

20

24

28

32

A

40

25°C

150°C

12 Typ. gate charge

VGS = f (QGate)

parameter: ID = 11 A pulsed

0

10

20

30

40

50

nC

70

QGate

0

2

4

6

8

10

12

V

16

SPP11N60C3

0,8 VDS max

DS max

V

0,2

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SPA11N60C3E8185 Datasheet(PDF) 7 Page - Infineon Technologies AG

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