IRFB3004PBF datasheet(3/11 Pages) IRF

Part #	IRFB3004PBF

Description	HEXFET Power MOSFET

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Manufacturer	IRF [International Rectifier]

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IRFB/S/SL3004PbF

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3

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance vs. Temperature

Fig 2. Typical Output Characteristics

Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage

Fig 5. Typical Capacitance vs. Drain-to-Source Voltage

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

10

100

1000

10000

VGS

TOP

15V

10V

8.0V

7.0V

6.0V

5.5V

4.8V

BOTTOM

4.5V

≤60µs PULSE WIDTH

Tj = 25°C

4.5V

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

10

100

1000

10000

4.5V

≤60µs PULSE WIDTH

Tj = 175°C

VGS

TOP

15V

10V

8.0V

7.0V

6.0V

5.5V

4.8V

BOTTOM

4.5V

1

2

3

4

5

6

7

8

VGS, Gate-to-Source Voltage (V)

0.1

1

10

100

1000

TJ = 25°C

TJ = 175°C

VDS = 25V

≤60µs PULSE WIDTH

-60 -40 -20 0 20 40 60 80 100120140160180

TJ , Junction Temperature (°C)

0.5

1.0

1.5

2.0

ID = 195A

VGS = 10V

1

10

100

VDS, Drain-to-Source Voltage (V)

100

1000

10000

100000

VGS = 0V,

f = 1 MHZ

Ciss = Cgs + Cgd, C ds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Coss

Crss

Ciss

0

50

100

150

200

QG, Total Gate Charge (nC)

0.0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

VDS= 32V

VDS= 20V

ID= 187A

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