SGB10N60A datasheet(7/11 Pages) INFINEON

Part #	SGB10N60A

Description	Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation

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Manufacturer	INFINEON [Infineon Technologies AG]

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SGB10N60A

7

Rev. 2.3

July 07

0A

5A

10A

15A

20A

25A

0,0m J

0,2m J

0,4m J

0,6m J

0,8m J

1,0m J

1,2m J

1,4m J

1,6m J

E

on*

E

off

E

ts*

0

Ω

20

Ω

40

Ω

60

Ω

80

Ω

0,2m J

0,4m J

0,6m J

0,8m J

1,0m J

E

ts*

E

on*

E

off

IC, COLLECTOR CURRENT

RG, GATE RESISTOR

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, Tj = 150°C, VCE = 400V,

VGE = 0/+15V, RG = 25Ω,

Dynamic test circuit in Figure E)

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, Tj = 150°C, VCE = 400V,

VGE = 0/+15V, IC = 10A,

Dynamic test circuit in Figure E)

0°C

50°C

100°C

150°C

0,0mJ

0,2mJ

0,4mJ

0,6mJ

0,8mJ

E

ts*

E

on*

E

off

1µs

10µs

100µs

1ms

10ms 100ms

1s

10

-3K/W

10

-2K/W

10

-1K/W

10

0K/W

0.01

0.02

0.05

0.1

0.2

single pulse

D=0.5

Tj, JUNCTION TEMPERATURE

tp, PULSE WIDTH

Figure 15. Typical switching energy losses

as a function of junction temperature

(inductive load, VCE = 400V, VGE = 0/+15V,

IC = 10A, RG = 25Ω,

Dynamic test circuit in Figure E)

Figure 16. IGBT transient thermal

impedance as a function of pulse width

(D = tp / T)

*) Eon and Ets include losses

due to diode recovery.

*) Eon and Ets include losses

due to diode recovery.

*) Eon and Ets include losses

due to diode recovery.

C1=

τ1/R1

R1

R2

C2=

τ2/R2

R

,( K / W )

τ , (s )

0.4287

0.0358

0.4830

4.3*10

-3

0.4383

3.46*10

-4

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