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SGB20N60 Datasheet(PDF) 2 Page - Infineon Technologies AG

Part # SGB20N60
Description  Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SGB20N60 Datasheet(HTML) 2 Page - Infineon Technologies AG

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SGB20N60
2
Rev. 2.2
Nov 06
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
RthJC
0.7
Thermal resistance,
junction – ambient
1)
RthJA
40
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
min.
Typ.
max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
V(BR)CES VGE=0V, IC=500µA
600
-
-
Collector-emitter saturation voltage
VCE(sat)
VGE = 15V, IC=20A
Tj=25°C
Tj=150°C
1.7
-
2
2.4
2.4
2.9
Gate-emitter threshold voltage
VGE(th)
IC=700µA,VCE=VGE
3
4
5
V
Zero gate voltage collector current
ICES
VCE=600V,VGE=0V
Tj=25°C
Tj=150°C
-
-
-
-
40
2500
µA
Gate-emitter leakage current
IGES
VCE=0V,VGE=20V
-
-
100
nA
Transconductance
gfs
VCE=20V, IC=20A
-
14
-
S
Dynamic Characteristic
Input capacitance
Ciss
-
1100
1320
Output capacitance
Coss
-
107
128
Reverse transfer capacitance
Crss
VCE=25V,
VGE=0V,
f=1MHz
-
63
76
pF
Gate charge
QGate
VCC=480V, IC=20A
VGE=15V
-
100
130
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
LE
-
7
-
nH
Short circuit collector current
2)
IC(SC)
VGE=15V,tSC≤10µs
VCC ≤ 600V,
Tj ≤ 150°C
-
200
-
A
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
2) Allowed number of short circuits: <1000; time between short circuits: >1s.


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