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SGB20N60 Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # SGB20N60
Description  Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SGB20N60 Datasheet(HTML) 1 Page - Infineon Technologies AG

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SGB20N60
1
Rev. 2.2
Nov 06
Fast IGBT in NPT-technology
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Qualified according to JEDEC
1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC
VCE(sat)
Tj
Marking
Package
SGB20N60
600V
20A
2.4V
150
°C G20N60
PG-TO-263-3-2
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
600
V
DC collector current
TC = 25°C
TC = 100°C
IC
40
20
Pulsed collector current, tp limited by Tjmax
ICpul s
80
Turn off safe operating area
VCE ≤ 600V, Tj ≤ 150°C
-
80
A
Gate-emitter voltage
VGE
±20
V
Avalanche energy, single pulse
IC = 20 A, VCC = 50 V, RGE = 25 Ω,
start at Tj = 25°C
EAS
115
mJ
Short circuit withstand time
2
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
tSC
10
µs
Power dissipation
TC = 25°C
Ptot
179
W
Operating junction and storage temperature
Tj , Tstg
-55...+150
Soldering temperature (reflow soldering, MSL1)
245
°C
1 J-STD-020 and JESD-022
2 Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
PG-TO-263-3-2 (D²-PAK)
(TO-263AB)


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