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SGB20N60 Datasheet(PDF) 6 Page - Infineon Technologies AG |
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SGB20N60 Datasheet(HTML) 6 Page - Infineon Technologies AG |
6 / 11 page SGB20N60 6 Rev. 2.2 Nov 06 10A 20A 30A 40A 10ns 100ns t r t d(on) t f t d(off) 0 Ω 10 Ω 20 Ω 30 Ω 40 Ω 50 Ω 60 Ω 10ns 100ns t r t d(on) t f t d(off) IC, COLLECTOR CURRENT RG, GATE RESISTOR Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150°C, VCE = 400V, VGE = 0/+15V, RG = 16Ω, Dynamic test circuit in Figure E) Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150°C, VCE = 400V, VGE = 0/+15V, IC = 20A, Dynamic test circuit in Figure E) 0°C 50°C 100°C 150°C 10ns 100ns t r t d(on) t f t d(off) -50°C 0°C 50°C 100°C 150°C 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V 5.0V 5.5V typ. min. max. Tj, JUNCTION TEMPERATURE Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 20A, RG = 16Ω, Dynamic test circuit in Figure E) Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.7mA) |
Similar Part No. - SGB20N60_06 |
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Similar Description - SGB20N60_06 |
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