SPD07N20_08 datasheet(7/10 Pages) INFINEON

Part #	SPD07N20

Description	SIPMOS횘 Power Transistor Features N channel Enhancement mode Avalanche rated

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Manufacturer	INFINEON [Infineon Technologies AG]

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7 / 10 page

SPD 07N20 G

Rev. 2.4

Page 7

2008-09-01

Drain-source on-resistance

RDS(on) = f (Tj)

parameter :

ID = 4.5 A, VGS = 10 V

-60

-20

20

60

100

140

˚C

200

Tj

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Ω

1.8

SPD07N20

typ

98%

Gate threshold voltage

VGS(th) = f (Tj)

parameter :

VGS = VDS, ID = 1 mA

-60

-20

20

60

100

˚C

160

Tj

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

3.6

4.0

4.4

V

5.0

min

typ

max

Typ. capacitances

C =

f (VDS)

parameter:

VGS = 0 V, f = 1 MHz

0

5

10

15

20

25

30

V

40

VDS

1

10

2

10

3

10

4

10

pF

Ciss

Coss

Crss

Forward characteristics of reverse diode

IF = f (VSD)

parameter:

Tj , tp = 80 µs

0.0

0.4

0.8

1.2

1.6

2.0

2.4

V

3.0

VSD

-1

10

0

10

1

10

2

10

A

SPD07N20

T

j = 25 ˚C typ

T

j = 25 ˚C (98%)

T

j = 150 ˚C typ

T

j = 150 ˚C (98%)

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