IR11662S

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© 2010 International Rectifier

11

Detailed Pin Description

VCC: Power Supply

This is the supply voltage pin of the IC and it is monitored by the under voltage lockout circuit. It is possible to

turn off the IC by pulling this pin below the minimum turn off threshold voltage, without damage to the IC.

To prevent noise problems, a bypass ceramic capacitor connected to Vcc and COM should be placed as

close as possible to the IR11662. This pin is internally clamped.

OVT: Offset Voltage Trimming

The pin can be optionally tied to ground, to VCC or left floating, to select 3 ranges of input offset trimming.

MOT: Minimum On Time

the gate signal will become active and turn on the power FET. Spurious ringings and oscillations can trigger

the input comparator off. The MOT blanks the input comparator keeping the FET on for a minimum time.

The MOT is programmed between 200ns and 3us (typ.) by using a resistor referenced to COM.

EN: Enable

This pin is used to activate the IC “sleep” mode by pulling the voltage level below 1.6V (typ). In sleep mode

the IC will consume a minimum amount of current. All switching functions will be disabled and the gate will be

inactive.

VD: Drain Voltage Sense

VD is the voltage sense pin for the power MOSFET Drain. This is a high voltage pin and particular care must

be taken in properly routing the connection to the power MOSFET drain.

Additional filtering and or current limiting on this pin are not recommended as it would limit switching

performance of the IC.

VS: Source Voltage Sense

VS is the differential sense pin for the power MOSFET Source. This pin must not be connected directly to the

power ground pin (7) but must be used to create a Kelvin contact as close as possible to the power MOSFET

source pin.

GND: Ground

This is ground potential pin of the integrated control circuit. The internal devices and gate driver are

referenced to this point.

VGATE: Gate Drive Output

This is the gate drive output of the IC. Drive voltage is internally limited and provides 1A peak source and 4A

peak sink capability. Although this pin can be directly connected to the power MOSFET gate, the use of

minimal gate resistor is recommended, especially when putting multiple FETs in parallel.

Care must be taken in order to keep the gate loop as short and as small as possible in order to achieve

optimal switching performance.