SKB06N60HS_07 datasheet(9/14 Pages) INFINEON

Part #	SKB06N60HS

Description	High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation

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Manufacturer	INFINEON [Infineon Technologies AG]

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SKB06N60HS

Power Semiconductors

9

Rev. 2.3

Oct.07

0nC

10nC

20nC

30nC

40nC

0V

5V

10V

15V

480V

120V

0V

10V

20V

10pF

100pF

C

rss

C

oss

C

iss

QGE, GATE CHARGE

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge

(

IC=6 A)

Figure 18. Typical capacitance as a function

of collector-emitter voltage

(

VGE=0V, f = 1 MHz)

10V

11V

12V

13V

14V

0µs

5µs

10µs

15µs

10V

12V

14V

16V

18V

0A

10A

20A

30A

40A

50A

60A

70A

VGE, GATE-EMITETR VOLTAGE

Figure 19. Short circuit withstand time as a

function of gate-emitter voltage

(

VCE=600V, start at TJ=25°C)

Figure 20. Typical short circuit collector

current as a function of gate-

emitter voltage

(

VCE ≤ 400V, Tj ≤ 150°C)

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SKB06N60HS Datasheet(PDF) 9 Page - Infineon Technologies AG

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