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BSS816NW Datasheet(PDF) 7 Page - Infineon Technologies AG |
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BSS816NW Datasheet(HTML) 7 Page - Infineon Technologies AG |
7 / 9 page BSS816NW 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=1.4 A pulsed parameter: T j(start) parameter: V DD 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=250 µA 16 17 18 19 20 21 22 23 24 25 -60 -20 20 60 100 140 T j [°C] 4 V 10 V 16 V 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.25 0.5 0.75 1 1.25 Q gate [nC] 25 °C 100 °C 125 °C 10 3 10 2 10 1 10 0 10 1 10 0 10 -1 t AV [µs] V GS Q gate V gs(th) Q g(th) Q gs Q gd Q sw Q g Rev 2.2 page 7 2009-02-11 |
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