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IFX25401TEV50 Datasheet(PDF) 5 Page - Infineon Technologies AG |
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IFX25401TEV50 Datasheet(HTML) 5 Page - Infineon Technologies AG |
5 / 16 page IFX25401 General Product Characteristics Data Sheet 5 Rev. 1.01, 2009-10-19 3 General Product Characteristics 3.1 Absolute Maximum Ratings Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. 3.2 Functional Range Absolute Maximum Ratings1) T j = -40 °C to 150 °C; all voltages with respect to ground, (unless otherwise specified) 1) not subject to production test, specified by design Pos. Parameter Symbol Limit Values Unit Test Condition Min. Max. Input I 3.1.1 Voltage V I -42 45 V – Voltage Adjust Input VA 3.1.2 Voltage V VA -0.3 10 V – Output Q 3.1.3 Voltage V Q -1 40 V – Temperature 3.1.4 Junction temperature T j -40 150 °C– 3.1.5 Storage temperature T stg -50 150 °C– ESD Susceptibility 3.1.6 ESD Absorption V ESD,HBM -2 2 kV Human Body Model (HBM)2) 2) ESD susceptibility Human Body Model “HBM” according to AEC-Q100-002 - JESD22-A114 3.1.7 V ESD,CDM -500 500 V Charge Device Model (CDM)3) 3) ESD susceptibility Charged Device Model “CDM” according to ESDA STM5.3.1 3.1.8 -750 750 V Charge Device Model (CDM) at corner pins3) Pos. Parameter Symbol Limit Values Unit Remarks Min. Max. 3.2.9 Input voltage V I V Q + 0.5 40 V IFX25401TBV, IFX25401TEV; IFX25401TBV50, IFX25401TEV50 V Q > 4 V 3.2.10 Input voltage V I 4.5 40 V IFX25401TBV, IFX25401TEV; V Q < 4 V |
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